def test_get_energy(self):
bracket = (from_unit(935, 'ueV'), from_unit(940, 'ueV'))
self.assertAlmostEqual(
self.model.get_energy(1 / self.model.period, self.mass, bracket,
unit('ueV')) / unit('ueV'),
935.6,
delta=0.1)
def test_get_energy(self):
bracket = (from_unit(70, 'meV'), from_unit(72, 'meV'))
self.assertAlmostEqual(
self.model.get_energy(1 / self.model.period, self.mass, bracket,
unit('ueV')) / unit('meV'),
71.2,
delta=0.1)
def test_from_materials(self):
# КДБ-100
res = DopedSemiconductor.from_materials(
Si,
from_unit(500, 'cm^2 / V s'), # Mobility for holes
'B',
from_unit(100, 'Ohm cm'))
self.assertEqual(res.Nd, 0)
self.assertAlmostEqual(res.Na, 1.2e14, delta=0.1e14)
# КЭМ-100
res = DopedSemiconductor.from_materials(
Si,
from_unit(1500, 'cm^2 / V s'), # Mobility for electrons
'As',
from_unit(100, 'Ohm cm'))
self.assertEqual(res.Na, 0)
self.assertAlmostEqual(res.Nd, 4.1e13, delta=0.1e13)
with self.assertRaises(KeyError):
DopedSemiconductor.from_materials(Si, 1, 'UNKNOWN', 1)
def test_Id_sat(self):
jfet = JFET(Si, 1e17, from_unit(1400, 'cm^2 /V s'), from_unit(1, 'um'),
from_unit(1, 'um'), from_unit(10, 'um'))
self.assertAlmostEqual(
jfet.Id_sat(from_unit(5, 'V'), from_unit(1, 'V')) / unit('mA'),
9.3,
delta=0.1)
def test_Ip(self):
jfet = JFET(Si, 1e17, from_unit(1400, 'cm^2 /V s'), from_unit(1, 'um'),
from_unit(1, 'um'), from_unit(10, 'um'))
self.assertAlmostEqual(jfet.Ip() / unit('mA'), 11.5, delta=0.1)
def test_Vp(self):
jfet = JFET(Si, 1e17, from_unit(1400, 'cm^2 /V s'), from_unit(1, 'um'),
from_unit(1, 'um'), from_unit(10, 'um'))
self.assertAlmostEqual(jfet.Vp() / unit('V'), 77.32, delta=0.01)
def setUp(self):
self.mass = 0.49 * me
self.model = DiracCombModel(from_unit(201, 'nm'),
from_unit(-0.58, 'nm * eV'))
def setUp(self):
self.mass = 0.49 * me
self.model = KronigPenneyModel(from_unit(5, 'nm'), from_unit(10, 'nm'),
from_unit(-0.58, 'eV'))
def test_convenience_methods(self):
self.assertEqual(to_unit(1, 'V'), 1 / unit('V'))
self.assertEqual(from_unit(1, 'V'), 1 * unit('V'))
