print('Silicon ni at 300 K {:.3e} cm-3'.format(pv.ni0_Misiakos(300)))
print('n-type cell with doping level of 2e15')
ni = pv.ni0_Misiakos()
n0, p0 = pv.carrier_conc(2e15, ni) # n-type dioping at 1e15
print('Majority n {:.3e}, Minority p: {:.3e}'.format(n0, p0))
dn = 1e15
dEc, dEv = pv.BGN_Schenk(n0 + dn, p0 + dn, n0, p0, dn)
print('BGN Ec: {:.2e} eV, Ev {:.2e} eV'.format(dEc, dEv))
print('nieff {:.3e}'.format(pv.n_ieff(n0, p0, 1e15)))
B = pv.B_altermatt(n0, p0, dn)
print('radiative: {:.3}'.format(B))
print('Mobility of electrons as minority carriers: ',
pv.u_Si_e_min(1e15)) # should I use cm-3 or m?
N = np.logspace(12, 21, 200) # sweep the doping in the base (cm-3)
# plot the mobilities
plt.plot(N, pv.u_Si_e_maj(N), label='electron majority')
plt.plot(N, pv.u_Si_e_min(N), label='electron minority')
plt.plot(N, pv.u_Si_h_maj(N), label='hole majority')
plt.plot(N, pv.u_Si_h_min(N), label='hole minority')
plt.semilogx()
plt.legend(loc='upper right')
plt.title('carrier mobilities in silicon')
plt.xlabel('doping (cm**{-3})') # add axis labels and plot title
plt.ylabel('mobility (cm**2Vs**{-1})µ²')
# plot the resisitivity
import photovoltaic as pv
import numpy as np
print('Thermal voltage 25 degC (V):', pv.Vt()) # default is 25degC
print('Thermal voltage 300 K (V):', pv.Vt(300))
print('Silicon ni at 25 degC {:.3e} cm-3'.format(pv.si.ni_misiakos()))
print('Silicon ni at 300 K {:.3e} cm-3'.format(pv.si.ni_misiakos(300)))
print('n-type cell with doping level of 2e15')
ni = pv.si.ni_misiakos()
n0, p0 = pv.semi.equilibrium_carrier(2e15, ni) # n-type dioping at 1e15
print('Majority n {:.3e}, Minority p: {:.3e}'.format(n0, p0))
dn = 1e15
dEc, dEv = pv.si.bandgap_schenk(n0 + dn, p0 + dn, n0, p0, dn)
print('BGN Ec: {:.2e} eV, Ev {:.2e} eV'.format(dEc, dEv))
print('nieff {:.3e}'.format(pv.si.n_ieff(n0, p0, 1e15)))
B = pv.si.U_radiative_alt(n0, p0, dn)
print('radiative: {:.3}'.format(B))
print('Mobility of electrons as minority carriers: ', pv.u_Si_e_min(1e15))
import photovoltaic as pv
import numpy as np
import matplotlib.pyplot as plt
N_D = np.logspace(12, 21, 200) # sweep the doping in the base (cm-3)
# plot the mobilities
plt.plot(N_D, pv.u_Si_e_maj(N_D), label='electron majority')
plt.plot(N_D, pv.u_Si_e_min(N_D), label='electron minority')
plt.plot(N_D, pv.u_Si_h_maj(N_D), label='hole majority')
plt.plot(N_D, pv.u_Si_h_min(N_D), label='hole minority')
plt.semilogx()
plt.legend(loc='upper right')
plt.title('carrier mobilities in silicon')
plt.xlabel('doping (cm**{-3})') # add axis labels and plot title
plt.ylabel('mobility (cm**2Vs**{-1})µ²')
# plot the resisitivity
plt.figure()
plt.plot(N_D, pv.resistivity_Si_n(N_D), label='n-type')
plt.plot(N_D, pv.resistivity_Si_p(N_D), label='p-type')
plt.loglog()
plt.legend()
plt.title('resisitivity in silicon as a function of doping')
plt.xlabel('doping (cm^{-3})')
plt.ylabel('resistivity (ohm cm)')
plt.xlim(1e12, 1e21)
plt.ylim(1e-4, 1e4)
# plt.show()
delta_n = pv.implied_carrier(0.7, 1e15)