"m",
"c",
"b",
"g",
"y",
"k",
"m",
"c",
]
Electrode = Metal("Au", q * 5.1)
P = Dopant("Phosphorus", 1.0e21, [[+1, 0.045 * q, 1], [0, 0.045 * q, 1]])
Si = Semiconductor("Si", lookup=True)
Si.add_dopant(P)
a = 5.43e-10
b = a * np.sqrt(2) / 2
S_e1 = Trap(
"Shallow electron trap",
charge_states=[[0, 0.1 * q, 1], [-1, 0.1 * q, 1]],
energy_distribution_function="Single Level",
energy_spread=0.01 * q,
)
D_e1 = Trap(
"Deep electron trap",
charge_states=[[0, 0.3 * q, 1], [-1, 0.3 * q, 1]],
energy_distribution_function="Single Level",
energy_spread=0.1 * q,
from Schottky.Metal import Metal
from Schottky.Semiconductor import Semiconductor, Trap, Dopant, Dislocation, BondingInterface
from Schottky.Diode import SchottkyDiode, Poisson, Kinetics, Visual
from Schottky.Helpers import Psi_approx
colors = [
'b', 'g', 'y', 'k', 'm', 'c', 'b', 'g', 'y', 'k', 'm', 'c', 'b', 'g', 'y',
'k', 'm', 'c', 'b', 'g', 'y', 'k', 'm', 'c'
]
Electrode = Metal('Au', q * 5.1)
P = Dopant('Phosphorus', 1.0e21, [[+1, 0.045 * q, 1], [0, 0.045 * q, 1]])
Si = Semiconductor('Si', lookup=True)
Si.add_dopant(P)
a = 5.43e-10
b = a * np.sqrt(2) / 2
S_e1 = Trap('Shallow electron trap',
charge_states=[[0, 0.1 * q, 1], [-1, 0.1 * q, 1]],
energy_distribution_function='Single Level',
energy_spread=0.01 * q)
D_e1 = Trap('Deep electron trap',
charge_states=[[0, 0.3 * q, 1], [-1, 0.3 * q, 1]],
energy_distribution_function='Single Level',
energy_spread=0.1 * q)
# S_h1 = Trap('Shallow hole trap', charge_states=[[1, Eg - 0.1 * q, 1], [0, Eg - 0.1 * q, 1]],
# energy_distribution_function='Single Level', energy_spread=0.01 * q)
from Schottky.Notation import q
from Schottky.Metal import Metal
from Schottky.Semiconductor import Semiconductor, Trap, Dopant, Dislocation, BondingInterface
from Potential.Potential_3D import ConstantFieldPotential, SuperposedPotential, ChargedCylinderPotential, \
DislocationDeformationPotential
data_dir = join(dirname(__file__), '03-data')
prefix = '03_Au_nSi_BW'
electrode = Metal('Au', q * 5.1)
dopant = Dopant('Phosphorus', 1.0e21, [[+1, 0.045 * q, 1], [0, 0.045 * q, 1]])
silicon = Semiconductor('Si', lookup=True)
silicon.add_dopant(dopant)
lattice_parameter = 5.43e-10
burgers_vector = lattice_parameter * np.sqrt(2) / 2
dp = DislocationDeformationPotential('Deformation', 5, 4e-10)
cc = ChargedCylinderPotential('Charged Dislocation', charge_sign=-1, linear_charge_density=1e7 * 0,
radius=1e-9, epsilon=11.8)
ef = ConstantFieldPotential('External Field', (0.0, 0.0, 0.0))
sp = SuperposedPotential('Superposed', [dp, cc, ef])
shallow_electron_trap = Trap('Shallow electron trap', charge_states=[[0, 0.15 * q, 1], [-1, 0.15 * q, 1]],
energy_distribution_function='Single Level', energy_spread=0.01 * q, trap_potential=sp)
deep_electron_trap = Trap('Deep electron trap', charge_states=[[0, 0.3 * q, 1], [-1, 0.3 * q, 1]],
energy_distribution_function='Single Level', energy_spread=0.1 * q, trap_potential=sp)
