"m", "c", "b", "g", "y", "k", "m", "c", ] Electrode = Metal("Au", q * 5.1) P = Dopant("Phosphorus", 1.0e21, [[+1, 0.045 * q, 1], [0, 0.045 * q, 1]]) Si = Semiconductor("Si", lookup=True) Si.add_dopant(P) a = 5.43e-10 b = a * np.sqrt(2) / 2 S_e1 = Trap( "Shallow electron trap", charge_states=[[0, 0.1 * q, 1], [-1, 0.1 * q, 1]], energy_distribution_function="Single Level", energy_spread=0.01 * q, ) D_e1 = Trap( "Deep electron trap", charge_states=[[0, 0.3 * q, 1], [-1, 0.3 * q, 1]], energy_distribution_function="Single Level", energy_spread=0.1 * q,
from Schottky.Metal import Metal from Schottky.Semiconductor import Semiconductor, Trap, Dopant, Dislocation, BondingInterface from Schottky.Diode import SchottkyDiode, Poisson, Kinetics, Visual from Schottky.Helpers import Psi_approx colors = [ 'b', 'g', 'y', 'k', 'm', 'c', 'b', 'g', 'y', 'k', 'm', 'c', 'b', 'g', 'y', 'k', 'm', 'c', 'b', 'g', 'y', 'k', 'm', 'c' ] Electrode = Metal('Au', q * 5.1) P = Dopant('Phosphorus', 1.0e21, [[+1, 0.045 * q, 1], [0, 0.045 * q, 1]]) Si = Semiconductor('Si', lookup=True) Si.add_dopant(P) a = 5.43e-10 b = a * np.sqrt(2) / 2 S_e1 = Trap('Shallow electron trap', charge_states=[[0, 0.1 * q, 1], [-1, 0.1 * q, 1]], energy_distribution_function='Single Level', energy_spread=0.01 * q) D_e1 = Trap('Deep electron trap', charge_states=[[0, 0.3 * q, 1], [-1, 0.3 * q, 1]], energy_distribution_function='Single Level', energy_spread=0.1 * q) # S_h1 = Trap('Shallow hole trap', charge_states=[[1, Eg - 0.1 * q, 1], [0, Eg - 0.1 * q, 1]], # energy_distribution_function='Single Level', energy_spread=0.01 * q)
from Schottky.Notation import q from Schottky.Metal import Metal from Schottky.Semiconductor import Semiconductor, Trap, Dopant, Dislocation, BondingInterface from Potential.Potential_3D import ConstantFieldPotential, SuperposedPotential, ChargedCylinderPotential, \ DislocationDeformationPotential data_dir = join(dirname(__file__), '03-data') prefix = '03_Au_nSi_BW' electrode = Metal('Au', q * 5.1) dopant = Dopant('Phosphorus', 1.0e21, [[+1, 0.045 * q, 1], [0, 0.045 * q, 1]]) silicon = Semiconductor('Si', lookup=True) silicon.add_dopant(dopant) lattice_parameter = 5.43e-10 burgers_vector = lattice_parameter * np.sqrt(2) / 2 dp = DislocationDeformationPotential('Deformation', 5, 4e-10) cc = ChargedCylinderPotential('Charged Dislocation', charge_sign=-1, linear_charge_density=1e7 * 0, radius=1e-9, epsilon=11.8) ef = ConstantFieldPotential('External Field', (0.0, 0.0, 0.0)) sp = SuperposedPotential('Superposed', [dp, cc, ef]) shallow_electron_trap = Trap('Shallow electron trap', charge_states=[[0, 0.15 * q, 1], [-1, 0.15 * q, 1]], energy_distribution_function='Single Level', energy_spread=0.01 * q, trap_potential=sp) deep_electron_trap = Trap('Deep electron trap', charge_states=[[0, 0.3 * q, 1], [-1, 0.3 * q, 1]], energy_distribution_function='Single Level', energy_spread=0.1 * q, trap_potential=sp)